Irff9110
WebIRFF9110 -100V Single P-channel Hi-rel MOSFET in a TO-205AF Package . The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves: very low on-state resistance combined with WebIRFF9110-JQR-B Specifications: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 1.2 ohms ; Package Type: TO-3, TO-39, HERMETIC SEALED, METAL, TO-39, 3 PIN ; Number of units in IC: 1 . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package.. All Semelab hermetically sealed products can …
Irff9110
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Web5961-01-273-5348, 5961012735348, 2052AS176-01, A3029298, NSFJ9110, IRFF9110, SML3P10 Transistor. Get a quote and buy 5961-01-273-5348 and other NSN parts. Fulfillment operation is ISO certified. WebNeobits.com: Buy International Rectifier - IRFF9110 - Trans MOSFET P-CH 100V 2.5A 3-Pin TO-39 (MOQ = 50)
WebBuy IRFF9110 HARRIS , Learn more about IRFF9110 HEXFET TRANSISTORS THRU-HOLE (TO-205AF), View the manufacturer, and stock, and datasheet pdf for the IRFF9110 at … WebIRFF9110 manufactured by:-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package: Download IRFF9110 datasheet from International Rectifier: pdf 138 kb : Trans MOSFET P-CH 100V 2.5A 3-Pin TO-39 Others with the same file for datasheet: IRFF9113: Download IRFF9110 datasheet from New Jersey Semiconductor: pdf 997 kb :
WebOrder today, ships today. IRFL9110 – P-Channel 100 V 1.1A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223 from Vishay Siliconix. Pricing and Availability on millions of electronic … WebParameter Max. Units ID @ Tc = 25°C Continuous Drain Current, VGS @ -10 V -1.1 ID @ Tc = 100°C Continuous Drain Current, VGS @ -10 V -0.69 IDM Pulsed Drain Current † -8.8 PD …
WebA IRFF9110 with Hermetic Packaging: Document Preview. REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE TO-205AF (TO-39) Description. The HEXFET® technology is the key to International Rectifier's HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of …
WebIRFF9110 Product details The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique … daily ferro tonicWeb维库为您提供全国G1054303原装现货信息、价格参考,免费PDF Datasheet资料下载,您能查看到G1054303供应商营业场所照片;这里有接受工程师小批量订购服务的G1054303供应商,全面诚信积分体系让您采购G1054303更放心。采购G1054303,就上维库电子市场! daily fence crowley laWebIRFF9110 P-Channel MOSFET. V DSS = 100V I D = 2.5A R DS(ON) = 1.2 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. Parameter Min. Typ. Max. Units V DSS Drain Source Breakdown Voltage 100 V I D Continuous Drain Current 2.5 A daily fenugreekdaily fetchur skyblockWebIRFF9110 Product details The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. daily fetal developmentWebIRFF9110 - PD-90388 IRFF9210 - PD-90382 IRFF9024 - PD-90413 IRFF9120 JANTX2N6845 PD-90552D IRFF9220 JANTX2N6847 PD-90553C IRFF9130 JANTX2N6849 PD-90550E IRFF9230 JANTX2N6851 PD-90551E IRF7F3704 - PD-94340B IRLF120 - PD-90639D. Title: Microsoft Word - Product Change Notice FV5-C-18-0017A.doc daily ferry to bahamas from floridaWebJun 20, 2024 · irff9110.pdf PD - 90388 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) IRFF9110 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9110 -100V 1.2 -2.5A The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. daily ferrous sulfate